PIC16F630_06 Datasheet, PDF (92/130 Pages) Microchip Technology – 14-Pin, Flash-Based 8-Bit CMOS Microcontrollers

PIC16F630/676
12.5 DC Characteristics: PIC16F630/676-E (Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min
Typ†
Max Units
VDD
Conditions
Note
D020E Power-down Base Current — 0.00099 3.5 μA
(IPD)
— 0.0012 4.0 μA
2.0 WDT, BOD, Comparators, VREF,
3.0 ^{and T1OSC disabled}
D021E
— 0.0029 8.0 μA
—
0.3 6.0 μA
5.0
2.0 WDT Current⁽¹⁾
—
1.8 9.0 μA
3.0
D022E
—
8.4
20 μA
5.0
—
58
70 μA
3.0 BOD Current⁽¹⁾
D023E
—
109 130 μA
5.0
—
3.3
10 μA
2.0 Comparator Current⁽¹⁾
—
6.1
13 μA
3.0
D024E
— 11.5 24 μA
—
58
70 μA
5.0
2.0 CVREF Current⁽¹⁾
—
85 100 μA
3.0
D025E
—
138 165 μA
5.0
—
4.0
10 μA
2.0 T1 OSC Current⁽¹⁾
—
4.6
12 μA
3.0
D026E
—
6.0
20 μA
— 0.0012 6.0 μA
5.0
3.0 A/D Current⁽¹⁾
— 0.0022 8.5 μA
5.0
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD.
DS40039D-page 90
© 2006 Microchip Technology Inc.