PIC18LF4520-IPT Datasheet, PDF (339/412 Pages) Microchip Technology – 28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology

PIC18F2420/2520/4420/4520
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Data EEPROM Memory
D120 ED Byte Endurance
100K 1M
— E/W -40°C to +85°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽¹⁾
1M 10M
— E/W -40°C to +85°C
D125 IDDP Supply Current during
Programming
—
10
— mA
Program Flash Memory
D130 EP Cell Endurance
10K 100K — E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE _{VDD for Block Erase}
3.0
—
5.5
V _{Using ICSP™ port, +25°C}
D132A VIW VDD for Externally Timed Erase 4.5
—
5.5
V Using ICSP™ port, +25°C
or Write
D132B VPEW VDD for Self-Timed Write
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D133 TIE _{ICSP Block Erase Cycle Time}
—
4
—
ms _{VDD ≥ 4.5V}
D133A TIW _{ICSP Erase or Write Cycle Time}
1
(externally timed)
—
—
ms VDD ≥ 4.5V, +25°C
D133A TIW Self-Timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
100
— Year Provided no other
specifications are violated
D135 IDDP Supply Current during
Programming
—
10
— mA
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
© 2008 Microchip Technology Inc.
DS39631E-page 337