PIC16LF1503 Datasheet, PDF (294/340 Pages) Microchip Technology – 14-Pin Flash, 8-Bit Microcontrollers

PIC16(L)F1503
28.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C
Param
No.
Sym.
Characteristic
D110
D111
D112
D113
VIHH
IDDP
VPEW
Program Memory Programming
Specifications
Voltage on MCLR/VPP pin
Supply Current during Programming
VDD for Bulk Erase
VDD for Write or Row Erase
Min.
8.0
—
2.7
VDD min.
Typ†
—
—
—
—
Max. Units
Conditions
9.0
V (Note 2, Note 3)
10
mA
VDD max. V
VDD max. V
D114 IPPPGM Current on MCLR/VPP during Erase/
—
Write
—
1.0
mA
D115 IDDPGM Current on VDD during Erase/Write
—
5.0
mA
Program Flash Memory
D121 EP
Cell Endurance
10K
—
—
E/W -40C to +85C (Note 1)
D122 VPR VDD for Read
VDD min.
—
VDD max. V
D123 TIW Self-timed Write Cycle Time
—
2
2.5
ms
D124 TRETD Characteristic Retention
40
—
—
Year Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Self-write and Block Erase.
2: Required only if single-supply programming is disabled.
3: The MPLAB^® ICD 2 does not support variable VPP output. Circuitry to limit the MPLAB ICD 2 VPP voltage must be
placed between the MPLAB ICD 2 and target system when programming or debugging with the MPLAB ICD 2.
DS41607A-page 294
Preliminary
 2011 Microchip Technology Inc.