MDU5512 Datasheet, PDF (7/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

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※ Note : I_D = 20A
V_DS = 15V
8
6
4
2
0
0
20
40
60
80
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
Fig.9 Maximum Safe Operating Area
10⁰
D=0.5
0.2
0.1
10^-1
0.05
0.02
10^-2 0.01 single pulse
※ Notes :
Duty Factor, D=t /t
12
PEAK T_J = P_DM * Z_{θ JA}* R_{θ JA}(t) + T_A
10^-3
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
10²
10³
t₁, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
6000
5000
C_iss
4000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
3000
2000
1000
C_oss
C_rss
※ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
0
0
10
20
30
V_DS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
100
80
60
40
20
0
25
50
75
100
125
150
T,
C
Case
Temperature
[℃
]
Fig.10 Maximum Drain Current vs. Case
Temperature
Feb. 2012 Version 1.0
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MagnaChip Semiconductor Ltd.