MDU5512 Datasheet, PDF (6/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

200
V_GS = 10V
160
120
80
3.5V
4.0V
3.0V
40
2.5V
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. V_GS = 10 V
2. I_D = 20 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
Area
30
※ Notes :
V_DS = 5V
25
20
15
T_J=25℃
10
5
0
1
2
3
4
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Feb. 2012 Version 1.0
6
6
4
V_GS = 4.5V
V_GS = 10V
2
0
5
10
15
20
25
30
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
18
※ Notes :
I_D = 20A
16
14
12
10
8
6
4
T_J = 25℃
2
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V_GS = 0V
10¹
T_J=25℃
10⁰
10^-1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
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