MDU5512 Datasheet, PDF (1/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

MDU5512
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The MDU5512 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU5512 is suitable for DC/DC converter and
general purpose applications.
Features
FET1
FET2
 VDS = 30V
 ID = 46.1A
VDS = 30V
ID = 80A @VGS = 10V

RDS(ON)
< 8.9mΩ
< 3.6mΩ @VGS = 10V
< 12.5mΩ
< 4.5mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested
5
S1/D2
S2
6
S2
S2
7
G2
8
4
1
D1 ³
D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC
TC=100^oC
TA=25^oC
TA=70^oC
TC=25^oC
TC=100^oC
TA=25^oC
TA=70^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
DD1
G^G 1
S ^DS1/D2
G^G 2
SS2
FET1
FET2
30
±20
±12
46.1
80
29.2
70.4
11.3
18.2
9.0
14.5
100
200
31.3
78.1
12.5
31.3
1.9
2.1
1.2
1.3
53
171
-55~150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
FET1
67
4
FET2
60
1.6
Unit
V
V
A
A
W
mJ
o_C
Unit
o_C/W
Feb. 2012 Version 1.0
1
MagnaChip Semiconductor Ltd.