MDU5512 Datasheet, PDF (5/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

FET2 Electrical Characteristics (Ta =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
VDS = 5V, ID = 20A
VDS = 15.0V, ID = 20A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15.0V,
RL = 1.5Ω, RG = 3.0Ω
f=1 MHz
IS = 1.0A, VGS = 0V
IF = 20A, dl/dt = 150A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 32.5A, VDD = 27V, VGS = 10V
Min
Typ
Max Unit
30
-
-
V
1.0
1.5
2.0
-
-
1
μA
-
-
±0.1
-
2.9
3.6
mΩ
-
3.3
4.5
-
91
-
S
57.3
76.4
95.5
26
34.7
43.3
nC
-
9.7
-
-
9.7
-
3138 4184 5230
406
542
678
pF
180
241
301
-
15.5
-
-
10.9
-
ns
-
74.9
-
-
10.3
-
-
1.2
2.0
Ω
-
0.7
1.0
V
-
31.1
40.4
ns
-
40.8
53.0
nC
Feb. 2012 Version 1.0
5
MagnaChip Semiconductor Ltd.