MDU5512 Datasheet, PDF (2/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

Ordering Information
Part Number
MDU5512URH
Temp. Range
-55~150^oC
Package
Dual PDFN56
Packing
Tape & Reel
RoHS Status
Halogen Free
FET1 Electrical Characteristics (Ta =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Cosss
Crss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 11.5A
VGS = 4.5V, ID = 11.5A
VDS = 5V, ID = 11.5A
VDS = 15.0V, ID = 11.5A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VDD=15V, RL=0.75 Ω,
ID=10A, VGS=10V, Rg=3Ω
f=1 MHz
IS = 1A, VGS = 0V
IF = 11.5A, dl/dt = 150A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 18.2A, VDD = 27V, VGS = 10V
Min
Typ
Max Unit
30
-
-
V
1.3
1.8
2.4
-
-
1
μA
-
-
±0.1
-
7.4
8.9
mΩ
-
10.0
12.5
-
35
-
S
13
17.3
21.6
6.2
8.2
10.3
nC
3.0
2.7
750
1000 1250
147
196
245
pF
60
80
100
-
7.3
-
-
10.9
-
ns
-
25.6
-
-
7.5
-
-
1.2
2.0
Ω
-
0.7
1.0
V
-
22.6
29.4
ns
-
20.6
26.8
nC
Feb. 2012 Version 1.0
2
MagnaChip Semiconductor Ltd.