MDU5512 Datasheet, PDF (3/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

100
V_GS = 10V
90
4.5V
4.0V
80
70
5.0V
60
8.0V
3.5V
50
40
30
3.0V
20
10
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. V_GS = 10 V
2. I_D = 11.5 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
Area
30
※ Notes :
27
V_DS = 5V
24
21
18
15
T_J=25℃
12
9
6
3
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
14
12
10
V_GS = 4.5V
8
V_GS = 10V
6
4
5
10
15
20
25
30
35
40
45
50
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
※ Notes :
25
I_D = 11.5A
20
15
10
T_J = 25℃
5
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V = 0V
GS
10¹
10⁰
T_J=25℃
10^-1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Feb. 2012 Version 1.0
3
MagnaChip Semiconductor Ltd.