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| MDU5512 Datasheet, PDF (4/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V | |||
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10
â» Note : ID = 11.5A
8
6
4
2
0
0
3
6
9
12
15
18
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
Operation in This Area
is Limited by R
102
DS(on)
100us
1ms
101
10 ms
100 ms
1s
100
10 s
DC
10-1
Single Pulse
TJ=Max Rated
TA=25â
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
100
D=0.5
0.3
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JA*
Rθ
JA(t)
+
T
A
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
1400
1200
Ciss
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
600
400
Coss
200
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
10
20
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [â ]
Fig.10 Maximum Drain Current vs. Case
Temperature
Feb. 2012 Version 1.0
4
MagnaChip Semiconductor Ltd.
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