MLX80004 Datasheet, PDF (9/38 Pages) Melexis Microelectronic Systems – Enhanced Universal Dual/Quad LIN Transceiver

MLX80002/MLX80004
Enhanced Universal Dual/Quad LIN Transceiver
Datasheet
7.3. Static Characteristics
Table 4: Static Characteristics
Unless otherwise specified all values in the following tables are valid for V_S = 5 to 27V and T_j= -40 to 150°C. All voltages
are referenced to ground (GND), positive currents flow into the IC.
Nr. Parameter
Symbol Condition
Min
Typ
Max Unit
PIN VS
301 Undervoltage lockout
VS_UV
2.4
4.8
V
302 Undervoltage lockout hysteresis^[1]
VS_UV_hys
0.1
0.3
0.7
V
303 Supply current, sleep mode
VM0DEx = 0V, Tj ≤ 85C
ISsl
VWAKE = VLINx = VS ≤14V
VM0Dex = 0V, Tj ≤ 125C
VWAKE = VLINx = VS ≤ 18V
9
15
µA
20
µA
304 Supply current standby mode
ISBY
VM0Dex = 0V,
after POR or WU
100
200
400
µA
305
Supply current active mode, dominant
Standard transceiver mode
ISd_slave
VM0Dex = 5V,VTxD1-4 = 0V
DIS_MAS = Vs (80004)
VM0Dex = 5V,VTxD1-2 = 0V
DIS_MAS = Vs (80002)
12
15
mA
7
9
306
Supply current active mode, dominant
Enhanced master mode
ISd_master
VM0Dex = 5V,VTxD1-4 = 0V
DIS_MAS = 0V (80004)
VM0Dex = 5V,VTxD1-2 = 0V
DIS_MAS = 0V (80002)
100
125
mA
50
65
307 Supply current active mode, recessive
ISr
VM0Dex = 5V,VTxD1-4 = 5V
3
5
mA
PIN LINx – Transmitter
310 Transmitter internal capacitance^[1]
CLIN
Capacitance on pins LINx
to GND
311 Short circuit bus current
IBUS_LIM
VLIN = VS,
VM0Dex = 5V,VTxDx = 0V
40
312
Pull up resistance bus, normal & standby
mode
RSLAVE
VDIS_MAS = VS
20
313
Pull up resistance bus, normal & standby
mode
RMaster
VDIS_MAS = 0V
900
314 Pull up current bus, sleep mode
ISLAVE_SLEEP
VLINx = 0V, VS = 12V,
VM0Dex = 0V,VTxDx = 5V
-100
315
Voltage drop at int. diode in pull up path
RSLAVE ^[1]
VSerDiode
0.4
316
Receiver dominant input leakage current
including pull up resistor
IBUS_PAS_dom
VLINx =0V, VS =12V,
VM0Dex = 5V,VTxDx = 5V,
-400
VDIS_MAS = VS
VLINx=18V, VS =5V,
317 Receiver recessive input leakage current
IBUS_PAS_rec
VM0Dex = 5V,VTxDx = 5V,
Tamb<125°C
VS = 0V,
318 Bus reverse current loss of battery ^[2]
IBUS_NO_BAT
0V < VLIN x< 18V
Tamb<125°C
319 Bus current during loss of ground ^[2]
IBUS_NO_GND
VS = VGND = 12V,
0 < VLINx < 18V
-10
320 Transmitter dominant voltage ^[2]
Rload = 500, VS = 5V
0
VolBUS
Rload = 500, VS >= 7V
0
30
40
pF
100
200
mA
30
60
kΏ
1000
1100
Ώ
-60
-20
µA
1
V
µA
20
µA
20
µA
50
µA
1.2
V
0.2×VS
321 Transmitter recessive voltage ^[2]
VohBUS
VM0Dex = 0/5V,VTxDx = 5V
0.8×VS
1×VS
V
Revision 021 – Sept 2016
Page 9 of 38