MLX80004 Datasheet, PDF (8/38 Pages) Melexis Microelectronic Systems – Enhanced Universal Dual/Quad LIN Transceiver

MLX80002/MLX80004
Enhanced Universal Dual/Quad LIN Transceiver
Datasheet
7.2. Absolute Maximum Ratings
Table 3: Absolute Maximum Ratings
Nr. Parameter
Symbol
201 Battery Supply Voltage
VS
202 Transients at battery supply voltage
VVS.tr1
203 Transients at battery supply voltage
VVS.tr2
204 Transients at high voltage signal pins
VLIN..tr1
205 Transients at high voltage signal pins
VLIN..tr2
206 Transients at high voltage signal and power supply pins VHV..tr3
207 DC voltage LINx
VLIN_DC
208 DC voltage WAKE
209 DC voltage INH, DIS_MAS
210 DC voltage low voltage I/O’s (RxDx,TxDx,MODEx)
VWAKE_DC
VINH_DC
VDISMAS_DC
Vlv_DC
211 ESD voltage, IEC 61000-4-2 ^[4]
VESD
212 ESD voltage, HBM (CDF-AEC-Q100-002)
VESD
213 ESD voltage, CDM (CDF-AEC-Q100-011)
214 Maximum latch - up free current at any Pin
215 Thermal impedance
216 Storage temperature
217 Junction temperature
VESD
ILATCH
JA
Tstg
Tvj
Condition
Respective to GND
ISO 7637/2 pulse 1^[1]
ISO 7637/2 pulse 2^[1]
ISO 7637/3 pulses 1^[2]
ISO 7637/3 pulses 2^[2]
ISO 7637/2 pulses 3A, 3B ^[3]
Respective to GND and VS
Loss of Ground( VGND=VS )
Respective to GND and VS
Loss of Ground( VGND=VS )
Pin LIN, VS, WAKE
Pin LIN, VS, WAKE, INH
vs GND
All other pins
JEDEC 1s2p board
Min
-0.3
-100
-30
-150
-20
-30
-20
-30
-0.3
-0.3
-10
-8
-3
-1000
-500
-55
-40
Max Unit
40
V
V
75
V
V
30
V
100
V
40
40
V
40
40
V
VS + 0.3
V
7
V
10
kV
8
kV
3
kV
1000
V
500
mA
50
K/W
150
°C
150
°C
[1] ISO 7637/2 test pulses are applied to VS via a reverse polarity diode and >10uF blocking capacitor.
[2] ISO 7637/3 test pulses are applied to LIN via a coupling capacitance of 100nF.
[3] ISO 7637/3 test pulses are applied to LIN via a coupling capacitance of 1nF. ISO 7637/2 test pulses are applied to VS via a reverse polarity
diode and >10uF blocking capacitor
[4] IEC 61000-4-2 validated by external Lab during product qualification (see application examples)
Revision 021 – Sept 2016
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