1032EA Datasheet, PDF (4/16 Pages) Lattice Semiconductor – In-System Programmable High Density PLD

Specifications ispLSI 1032EA
Absolute Maximum Ratings ¹
Supply Voltage V_cc .................................. -0.5 to +7.0V
Input Voltage Applied ........................ -2.5 to V_CC +1.0V
Off-State Output Voltage Applied ..... -2.5 to V_CC +1.0V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T_J) with Power Applied ... 150°C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Conditions
SYMBOL
VCC
VCCIO
VIL
VIH
PARAMETER
Supply Voltage
Commercial
Supply Voltage: Output Drivers
5V
3.3V
Input Low Voltage
Input High Voltage
T_A = 0°C to + 70°C
MIN.
4.75
4.75
3.0
0
2.0
MAX. UNITS
5.25
V
5.25
V
3.6
V
0.8
V
V_cc+1
V
Table 2-0005/1032EA
Capacitance (T_A=25^oC, f=1.0 MHz)
SYMBOL
PARAMETER
C₁
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
C₂
Y0 Clock Capacitance
Erase/Reprogram Specifications
TYPICAL
8
UNITS
pf
TEST CONDITIONS
V_CC = 5.0V, V_PIN = 2.0V
10
pf
V_CC = 5.0V, V_PIN = 2.0V
Table 2-0006/1032EA
PARAMETER
Erase/Reprogram Cycles
MINIMUM
10000
MAXIMUM
–
UNITS
Cycles
Table 2-0008/1032EA
4