10321111 Datasheet, PDF (4/19 Pages) Lattice Semiconductor – High-Density Programmable Logic

Specifications ispLSI and pLSI 1032
Switching Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Time
≤ 3ns 10% to 90%
Input Timing Reference Levels
1.5V
Output Timing Reference Levels
1.5V
Output Load
See figure 2
3-state levels are measured 0.5V from steady-state
active level.
Table 2- 0003
Figure 2. Test Load
Device
Output
+ 5V
R1
R2
Test
Point
CL*
Output Load Conditions (see figure 2)
Test Condition
A
B Active High
Active Low
Active High to Z
C at V - 0.5V
OH
Active Low to Z
at V + 0.5V
OL
R1
470Ω
∞
470Ω
∞
470Ω
R2
390Ω
390Ω
390Ω
390Ω
390Ω
CL
35pF
35pF
35pF
5pF
5pF
*CL includes Test Fixture and Probe Capacitance.
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
CONDITION
MIN. TYP.³ MAX. _UNITS
VOL ^{Output Low Voltage}
I_OL =8 mA
–
–
0.4
V
VOH ^{Output High Voltage}
I_OH =-4 mA
2.4
–
–
V
IIL
Input or I/O Low Leakage Current 0V ≤ V_IN ≤ V_IL (MAX.)
–
–
-10
µA
IIH
Input or I/O High Leakage Current 3.5V ≤ V_IN ≤ V_CC
–
–
10
µA
IIL-isp ^{isp Input Low Leakage Current 0V ≤ V}IN ^{≤ V}IL ^(MAX.)
–
– -150
µA
IIL-PU ^{I/O Active Pull-Up Current}
0V ≤ V_IN ≤ V_IL
–
– -150
µA
IOS^{1 Output Short Circuit Current}
V_CC = 5V, V_OUT = 0.5V
–
– -200
mA
ICC^{2,4 Operating Power Supply Current} VIL = 0.5V, VIH = 3.0V Commercial
–
130 190
mA
f_TOGGLE = 1 MHz
Industrial/Military –
135 220
mA
1. One output at a time for a maximum duration of one second.
2. Measured using eight 16-bit counters.
3. Typical values are at V = 5V and T = 25^oC.
CC
A
4. Maximum I_CC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption sec-
tion of this datasheet and Thermal Management section of this Data Book to estimate maximum I_CC.
Table 2- 0007A-32-isp
4
1996 ISP Encyclopedia