BFM505_2015 Datasheet, PDF (8/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM505
APPLICATION INFORMATION
SPICE parameters for any single BFM505 die
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19⁽¹⁾
20⁽¹⁾
21⁽¹⁾
22
23
24
25
26
27
28
29
30
31
32
33
34
35⁽¹⁾
36⁽¹⁾
37⁽¹⁾
38
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
VALUE UNIT
134.1 aA
180.0 −
0.988 −
38.34 V
150.0 mA
27.81 fA
2.051 −
55.19 −
0.982 −
2.459 V
2.920 mA
17.45 aA
1.062 −
20.00 Ω
1.000 µA
20.00 Ω
1.171 Ω
4.350 Ω
0.000 −
1.110 eV
3.000 −
284.7 fF
600.0 mV
0.303 −
7.037 ps
12.34 −
1.701 V
30.64 mA
0.000 deg
242.4 fF
188.6 mV
0.041 −
0.130 −
1.332 ns
0.000 F
750.0 mV
0.000 −
0.897 −
Note
1. These parameters have not been extracted,
the default values are shown.
handbook, halfpage
C1
LP
C2
LP
B1
LB
T1
T2
B2
LB
LE
LE
E1
E2
MBG188
Fig.14 Package equivalent circuit SOT363A
(inductance only).
Lead inductances (nH)
LP
0.4
LB
0.6
LE
1.0
E2 3
E1 27 6
B2 1 27 3
C2 3 17 36 48
C1 48 36 17 3 6
MBG189
B1 E2 E1 B2 C2
Fig.15 Package capacitance (fF) between
indicated nodes.
1996 Oct 08
8