BFM505_2015 Datasheet, PDF (7/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
5
handbook, halfpage
F
(dB)
4
MGC766
3
2
2000 MHz
1000 MHz
900 MHz
1
500 MHz
0
10^−1
1
IC (mA)
10
V_CE = 3 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Product specification
BFM505
20
handbook, halfpage
Gass
(dB)
15
10
5
0
−5
10^−1
MGD686
f = 900 MHz
1GHz
2 GHz
1
IC (mA)
10
V_CE = 3 V.
Fig.11 Associated available gain as a function of
collector current; typical values.
5
handbook, halfpage
F
(dB)
4
3
2
5 mA
1
1.25 mA
0
10²
MGC768
10³
f (MHz)
10⁴
V_CE = 3 V.
Fig.12 Minimum noise figure as a function of
frequency; typical values.
1996 Oct 08
handboo²k,⁰halfpage
Gass
(dB)
IC = 1.25 mA
15
5 mA
MGC769
10
5
0
−5
10²
10³
f (MHz)
10⁴
V_CE = 3 V.
Fig.13 Associated available gain as a function of
frequency; typical values.
7