BFM505_2015 Datasheet, PDF (3/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System IEC 134.
SYMBOL
PARAMETER
CONDITIONS
Any single transistor
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 118 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction
to soldering point; note 1
CONDITIONS
single loaded
double loaded
Note to the Limiting values and Thermal characteristics
1. T_s is the temperature at the soldering point of the collector pin.
Product specification
BFM505
MIN. MAX. UNIT
−
20
V
−
8
V
−
2.5 V
−
18
mA
−
500 mW
−65 +175 °C
−
175 °C
VALUE
230
115
UNIT
K/W
K/W
1996 Oct 08
3