BFM505_2015 Datasheet, PDF (6/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM505
handbook,²h⁰alfpage
gain
(dB)
16
12
MSG
8
4
0
0
4
GUM
MGG199
8 _{IC (mA)} 12
f = 900 MHz; V_CE = 3 V.
Fig.6 Gain as a function of collector current;
typical values.
handbook,²h⁰alfpage
gain
(dB)
16
12
MSG/Gmax
GUM
8
4
0
0
4
MGG200
8 _{IC (mA)} 12
f = 2 GHz; V_CE = 3 V.
Fig.7 Gain as a function of collector current;
typical values.
50
handbook, halfpage
gain
(dB)
40
GUM
MSG/Gmax
30
20
10
0
10
10²
MGG201
10³ _{f (MHz)} 10⁴
50
handbook, halfpage
gain
(dB)
40
GUM
30
MSG/Gmax
20
MGG202
10
0
10
10²
10³ _{f (MHz)} 10⁴
I_C = 1 mA; V_CE = 3 V.
Fig.8 Gain as a function of frequency;
typical values.
1996 Oct 08
I_C = 5 mA; V_CE = 3 V.
Fig.9 Gain as a function of frequency;
typical values.
6