BFM505_2015 Datasheet, PDF (5/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM505
600
handbook, halfpage
Ptot
(mW)
double loaded
400
single loaded
200
MBG208
handboo¹k,²halfpage
fT
(GHz)
8
4
MGD687
VCE = 6V
3V
0
0
50
100
150
200
Ts (^oC)
Fig.2 Power derating as a function of soldering
point temperature; typical values.
0
10^−1
1
IC (mA)
10
f = 1 GHz; T_amb = 25 °C.
Fig.3 Transition frequency as a function of
collector current; typical values.
250
handbook, halfpage
hFE
200
MRA719
150
100
50
010_−3
10^−2
10^−1
1
10
10²
IC (mA)
V_CE = 6 V.
Fig.4 DC current gain as a function of collector
current; typical values.
handbook⁰, ^.h⁴alfpage
Cre
(pF)
0.3
MRA720
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Oct 08
5