BFM505_2015 Datasheet, PDF (2/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual NPN wideband transistor

Philips Semiconductors
Dual NPN wideband transistor
Product specification
BFM505
FEATURES
• Small size
• Temperature and h_FE matched
• Low noise and high gain
• High gain at low current and low capacitance at low
voltage
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Oscillator and buffer amplifiers
• Balanced amplifiers
• LNA/mixer.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount, 6-pin SOT363 (S-mini) package. The transistors
are primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
PINNING - SOT363A
PIN SYMBOL
DESCRIPTION
1
b₁
base 1
2
e₁
emitter 1
3
c₂
collector 2
4
b₂
base 2
5
e₂
emitter 2
6
c₁
collector 1
654
handbook, halfpage
c1
c2
b1
b2
123
Top view
Marking code: N0.
e1
e2
MAM210
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Any single transistor
C_re
f_T
s₂₁ ²
feedback capacitance
transition frequency
insertion power gain
G_UM
maximum unilateral power gain
F
noise figure
R_{th j-s}
thermal resistance from junction
to soldering point
CONDITIONS
MIN. TYP. MAX. UNIT
I_e = 0; V_CB = 3 V; f = 1 MHz
−
I_C = 5 mA; V_CE = 3V; f = 1 GHz
−
I_C = 5 mA; V_CE = 3 V; f = 900 MHz; 14
T_amb = 25 °C
I_C = 5 mA; V_CE = 3 V; f = 900 MHz; −
T_amb = 25 °C
I_C = 1 mA; V_CE = 3 V; f = 900 MHz; −
Γ_S = Γ_opt
single loaded
−
double loaded
−
0.22 −
9
−
15
−
pF
GHz
dB
17
−
dB
1.1 1.6 dB
−
230 K/W
−
115 K/W
1996 Oct 08
2