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| BFM505_2015 Datasheet, PDF (4/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual NPN wideband transistor | |||
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Philips Semiconductors
Dual NPN wideband transistor
Product speciï¬cation
BFM505
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0
20
V(BR)CEO collector-emitter breakdown voltage IC = 10 µA; IB = 0
8
V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0
2.5
ICBO
collector-base leakage current
VCB = 6 V; IE = 0
â
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
DC characteristics of the dual transistor
âhFE
âVBEO
ratio of highest and lowest DC
current gain
difference between highest and
lowest base-emitter voltage
(offset voltage)
IC1 = IC2 = 5 mA;
1
VCE1 = VCE2 = 6 V
IE1 = IE2 = 10 mA; Tamb = 25 °C 0
â
â
V
â
â
V
â
â
V
â
50
nA
120 250
1.2 â
1
â
mV
AC characteristics of any single transistor
fT
Cc
Cre
GUM
s21 2
F
transition frequency
collector capacitance
feedback capacitance
maximum unilateral power gain;
note 1
insertion power gain
noise ï¬gure
IC = 5 mA; VCE = 3 V; f = 1 GHz â
IE = ie = 0; VCB = 3 V; f = 1 MHz â
IC = 0; VCB = 3 V; f = 1 MHz
â
IC = 5 mA; VCE = 3 V;
â
Tamb = 25 °C; f = 900 MHz
IC = 5 mA; VCE = 3 V;
â
Tamb = 25 °C; f = 2 GHz
IC = 5 mA; VCE = 3 V;
14
f = 900 MHz; Tamb = 25 °C
IC = 5 mA; VCE = 3 V;
â
f = 900 MHz; ÎS = Îopt
IC = 5 mA; VCE = 3 V;
â
f = 2 GHz; ÎS = Îopt
IC = 1 mA; VCE = 3 V;
â
f = 900 MHz; ÎS = Îopt
9
â
0.31 â
0.22 â
17
â
10
â
15
â
1.4 1.8
1.9 â
1.1 1.6
GHz
pF
pF
dB
dB
dB
dB
dB
dB
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
GUM
=
10 log -(---1-----â------s---1--1-----2s--)-2---1-(--1-2----â------s---2---2----2---)-- dB
1996 Oct 08
4
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