IS61NLP12832B Datasheet, PDF (13/29 Pages) Integrated Silicon Solution, Inc – 128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM

IS61NLP12832B
 IS61NLP12836B/IS61NVP12836B
 _{IS 61NLP25618A/IS61NVP25618A}
LINEAR BURST ADDRESS TABLE (MODE = Vss)  
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameter
Value
Unit
Tstg
Storage Temperature
–65 to +150
°C
Pd
Power Dissipation
1.6
W
Iout
Output Current (per I/O)
100
mA
Vin, Vout
Voltage Relative to Vss for I/O Pins
–0.5 to Vddq + 0.5
V
Vin

Voltage Relative to Vss for
for Address and Control Inputs
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precau-
tions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATING RANGE (IS61NLPx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
OPERATING RANGE (IS61NVPx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
Vdd
3.3V ± 5%
3.3V ± 5%
Vddq
3.3V / 2.5V ± 5%
3.3V / 2.5V ± 5%
Vdd
2.5V ± 5%
2.5V ± 5%
Vddq
2.5V ± 5%
2.5V ± 5%
Integrated Silicon Solution, Inc. — www.issi.com
13
Rev.  D
09/10/07