JANSR2N7626UB Datasheet, PDF (7/11 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µs
1
1ms
10ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.01
0.1
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
80
70
ID
TOP
-0.53A
60
-0.34A
BOTTOM -0.24A
50
40
30
20
10
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1000
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
1
0.1
1E-005
0.0001
0.001
SINGLE PULSE
( THERMAL RESPONSE )
P _DM
t₁
t₂
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
10
100
1000
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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