JANSR2N7626UB Datasheet, PDF (6/11 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

IRHLUB7970Z4, JANSR2N7626UB
Pre-Irradiation
250
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
200
C_oss = C_ds + C_gd
C_iss
150
100
C_oss
50
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
12 _{ID = -0.53A}
10
V_DS =-48V
V_DS =-30V
V_DS =-12V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
2
3
4
5
6
Q_G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
0
VGS = 0V
1
2
3
4
5
-VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
0.6
0.5
0.4
0.2
0.1
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
www.irf.com