JANSR2N7626UB Datasheet, PDF (2/11 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

IRHLUB7970Z4, JANSR2N7626UB
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ ^{Gate Threshold Voltage Coefficient}
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td_(on)
tr
td_(off)
tf
LS + LD
Ciss
Coss
Crss
Rg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min
-60
—
—
-1.0
—
0.23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—— V
-0.055 — V/°C
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
— 1.40 Ω
VGS = -4.5V, ID = -0.33A Ã
— -2.0 V
3.1 — mV/°C
VDS = VGS, ID = -250µA
—— S
— -1.0
— -10 ^µA
— -100 _nA
— 100
— 3.6
— 1.5 nC
— 1.8
VDS = -10V, IDS = 0.33A Ã
VDS= -48V ,VGS=0V
VDS = -48V,
VGS = 0V, TJ = 125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.53A
VDS = -30V
— 22
— 22 _ns
— 27
VDD = -30V, ID = -0.53A,
VGS = -5.0V, RG = 24Ω
— 27
8.4 —
nH ^{Measured from the center of}
drain pad to center of source pad
167 —
43 — pF
VGS = 0V, VDS = -25V
f = 100KHz
10 —
56
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode) — — -0.53 _A
ISM Pulse Source Current (Body Diode)
— — -2.12
VSD Diode Forward Voltage
— — -5.0 V
Tj = 25°C, IS = -0.53A, VGS = 0V „
trr Reverse Recovery Time
— — 50 ns Tj = 25°C, IF = -0.53A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge
— — 25 nC
VDD ≤ -25V „
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
— — 220 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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