JANSR2N7626UB Datasheet, PDF (4/11 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

IRHLUB7970Z4, JANSR2N7626UB
Pre-Irradiation
10
VGS
TOP
-10V
-5.0V
-4.5V
-3.5V
-3.0V
-2.75V
-2.50V
BOTTOM -2.25V
1
-2.25V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
VGS
TOP
-10V
-5.0V
-4.5V
-3.5V
-3.0V
-2.75V
-2.50V
BOTTOM -2.25V
1
-2.25V
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
1.0
TJ = 150°C
TJ = 25°C
0.1
1.5
VDS = -25V
60µs P1U5LSE WIDTH
2.0
2.5
3.0
3.5
4.0
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.0
ID = -0.53A
1.6
1.2
0.8
0.4
VGS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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