JANSR2N7626UB Datasheet, PDF (11/11 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

Pre-Irradiation
Footnotes:
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
‚ VDD = -25V, starting TJ = 25°C, L= 238 mH
Peak IL =- 0.53A, VGS = -10V
ƒ ISD ≤ -0.53A, di/dt ≤ -100A/µs,
VDD ≤ -60V, TJ ≤ 150°C
IRHLUB7970Z4, JANSR2N7626UB
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
… Total Dose Irradiation with VGS Bias.
-10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
† Total Dose Irradiation with VDS Bias.
-48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Additional Product Summaries (continued from page 1 and 3)
Product Summary
Part Number Radiation Level RDS(on) ID
QPL Part Number
IRHLUBN7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UBN
IRHLUBN7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UBN
UBN
(ISOLATED METAL LID)
Product Summary
Part Number Radiation Level RDS(on) ID
QPL Part Number
IRHLUBC7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UBC
IRHLUBC7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UBC
UBC
(SHIELDED CERAMIC LID)
Product Summary
Part Number
Radiation Level RDS(on) ID QPL Part Number
IRHLUBCN7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UBCN
IRHLUBCN7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UBCN
UBCN
(ISOLATED CERAMIC LID)
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Data and specifications subject to change without notice. 09/2010
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