JANSR2N7626UB Datasheet, PDF (3/11 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

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IRHLUB7970Z4, JANSR2N7626UB
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation … †
BV_DSS
VGS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)
R_DS(on)
V_SD
Parameter
Up to 300K Rads (Si)¹
Min
Max
Drain-to-Source Breakdown Voltage -60
Gate Threshold Voltage
-1.0
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Zero Gate Voltage Drain Current
—
Static Drain-to-Source„
On-State Resistance (TO-39)
—
Static Drain-to-Source On-state „
Resistance (UB)
—
—
-2.0
-100
100
-1.0
1.36
1.40
Diode Forward Voltage „
—
-5.0
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V_GS = 0V, I_D = -250µA
VGS = V_DS, I_D = -250µA
V_GS = -10V
V_GS = 10V
V_DS = -48V, V_GS = 0V
VGS = -4.5V, I_D = -0.33A
VGS = -4.5V, I_D = -0.33A
VGS = 0V, I_D = -0.53A
1. Part Numbers IRHLUB7970Z4, IRHLUB7930Z4 and additional part numbers listed on page 11.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
VDS (V)
(MeV/(mg/cm²))
(MeV)
(µm)
@VGS=
0V
@VGS= @VGS=
2V
4V
38 ± 5%
300 ± 7.5%
38 ± 7.5%
-60
-60
-60
62 ± 5%
355 ± 7.5%
33 ± 7.5%
-60
-60
-60
85 ± 5%
380 ± 7.5%
29 ± 7.5%
-60
-60
-60
@VGS=
5V
-60
-60
-60
@VGS=
6V
-60
-60
-
@VGS=
7V
-50
-
-
-70
-60
-50
-40
-30
-20
-10
0
0 1 2 34 5 6 7
Bias VGS (V)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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