JANSR2N7626UB Datasheet, PDF (5/11 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)

Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
3.5
ID = -0.53A
3.0
2.5
2.0
TJ = 150°C
1.5
1.0
TJ = 25°C
0.5
2 3 4 5 6 7 8 9 10 11 12
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
3.0
TJ = 150°C
2.5
2.0
1.5
1.0
0.5
0
TJ = 25°C
Vgs = -4.5V
0.5
1.0
1.5
2.0
2.5
-ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
75
ID = -1.0mA
70
65
60
55
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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3.0
2.5
2.0
1.5
1.0
ID = -50µA
ID = -250µA
0.5
ID = -1.0mA
ID = -150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5