ISL75052SEH Datasheet, PDF (5/16 Pages) Intersil Corporation – 1.5A, Rad Hard, Positive, High Voltage LDO

ISL75052SEH
Absolute Maximum Ratings
V_IN Relative to GND without ion beam (Note 2) . . . . . . . . . . -0.3 to +16.0V
V_IN Relative to GND under ion beam (Note 2) . . . . . . . . . . . -0.3 to +14.7V
V_OUT Relative to GND (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +14.7V
PG,EN,OCP/ADJ,COMP,REFIN,REFOUT relative to GND (Note 2) . . . -0.3 to
+6.5VDC
Recommended Operating Conditions (Notes 3)
Ambient Temperature Range (T_A) . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Junction Temperature (T_J) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
V_IN Relative to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V to 13.2V
V_OUT Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5V to 12.7V
PG, EN, OCP/ADJ relative to GND . . . . . . . . . . . . . . . . . . . . . . . .0V to +5.5V
Thermal Information
Thermal Resistance (Typical)
θ_JA (°C/W) θ_JC (°C/W)
16 Ld CDFP Package (Notes 5, 6) . . . . . . .
26
4.5
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature (T_J) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Radiation Information
Maximum Total Dose
High Dose(Dose Rate = 50 - 300radSi/s) . . . . . . . . . . . .100 krads (Si)
Low Dose(Dose Rate = 10milliradSi/s) (Note 4) . . . . . . 100 krads (Si)
SET (V_OUT within ±5% During Events . . . . . . . . . . . . . . . .86MeV/mg/cm²
SEL/B (No Latchup/Burnout . . . . . . . . . . . . . . . . . . . . . . . . 86MeV/mg/cm²
The output capacitance used for SEE testing is 2x100µF for C_IN and C_OUT,
100nF for BYPASS
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
2. Extended operation at these conditions may compromise reliability. Exceeding these limits will result in damage. Recommended operating conditions
define limits where specifications are guaranteed.
3. Refer to “Bottom Metal Mounting Guidelines” on page 8.
4. Product capability established by initial characterization. The "EH" version is acceptance tested on a wafer by wafer basis to 50 krad(Si) at low dose
rate.
5. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
TechBrief TB379
6. For θ_JC, the “case temp” location is the center of the exposed metal pad on the package underside.
7. Electromigration specification defined as lifetime average junction temperature of +150°C where max rated DC current = lifetime average current.
Electrical Specifications Unless otherwise noted, all parameters are guaranteed over the following specified conditions:
V_IN = V_OUT + 0.5V, V_OUT = 4.0V, C_IN = C_OUT = 2x100µF 60mΩ, KEMET type T541X107N025AH or equivalent, T_J = +25°C, I_L = 0A. Applications must follow
thermal guidelines of the package to determine worst case junction temperature. Please refer to “Applications Information” on page 7 of the data sheet
and Tech Brief TB379. Boldface limits apply over the operating temperature range, -55°C to +125°C. Pulse load techniques used by ATE to ensure T_J = T_A
defines guaranteed limits.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
(Note 8) TYP (Note 8) UNITS
DC CHARACTERISTICS
DC Output Voltage Accuracy
V_OUT
V_OUT Resistor adjust to: 2.5V and 5.0V
V_OUT = 2.5V, 4.0V < V_IN < 5.0V; 0A < I_LOAD < 1.5A,
-1.5 0.2 1.5
%
T_J = -55°C to +125°C
V_OUT = 2.5V, 4.0V < V_IN < 5.0V; 0A < I_LOAD < 1.5A,
-2.0 0.2 2.0
%
T_J = +25°C, Post Rad.
V_OUT = 5.0V, 5.5V < V_IN < 6.9V; 0A < I_LOAD < 1.5A,
-1.5 0.2 1.5
%
T_J = -55°C to +125°C
V_OUT = 5.0V, 5.5V < V_IN < 6.9V, 0A < I_LOAD < 1.5A,
-2.0 0.2 2.0
%
T_J = +25°C, Post Rad.
V_OUT Resistor adjust to: 10.0V
V_OUT = 10.0V, 10.5V < V_IN < 13.2V, I_{LOAD =} 0A,
T_J =-55°C to +125°C
-1.5 0.2 1.5
%
V_OUT = 10.0V, 10.5V < V_IN < 13.2V, I_{LOAD =} 0A,
T_J = +25°C, Post Rad.
-2.0 0.2 2.0
%
V_OUT = 10.0V, V_IN = 10.5V, I_LOAD = 1.5A, V_IN =13.2V, -1.5
0.2
1.5
%
I_LOAD = 1.0A, T_J = -55°C to +125°C
V_OUT = 10.0V, V_IN = 10.5V; I_LOAD =1.5A, V_IN =13.2V, -2.0
0.2
2.0
%
I_LOAD = 1.0A, T_J = +25°C, Post Rad.
5
FN8456.0
May 29, 2013