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| ISL75052SEH Datasheet, PDF (13/16 Pages) Intersil Corporation – 1.5A, Rad Hard, Positive, High Voltage LDO | |||
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ISL75052SEH
Package Characteristics
Weight of Packaged Device
0.59 Grams (Typical)
Lid Characteristics
Finish: Gold
Potential: Connected to Pin 13 (GND)
Case Isolation to Any Lead: 20 x 109 ⦠(min)
Die Characteristics
Die Dimensions
2819μm x 5638μm (111 mils x 222 mils).
Thickness: 304.8μm ± 25.4μm (12.0 mils ± 1 mil).
Interface Materials
GLASSIVATION
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 2.7µm ± 0.4µm
SUSTRATE
Type: Silicon
BACKSIDE FINISH
Silicon
ASSEMBLY RELATED INFORMATION
SUBSTRATE POTENTIAL
Ground
ADDITIONAL INFORMATION
WORST CASE CURRENT DENSITY
< 2 x 105 A/cm2
TRANSISTOR COUNT
1074
PROCESS
0.6µm BiCMOS Junction Isolated
13
FN8456.0
May 29, 2013
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