ISL75052SEH Datasheet, PDF (1/16 Pages) Intersil Corporation – 1.5A, Rad Hard, Positive, High Voltage LDO

1.5A, Rad Hard, Positive, High Voltage LDO
ISL75052SEH
The ISL75052SEH is a radiation hardened, single output LDO
specified for an output current of 1.5A. The device operates from
an input voltage range of 4.0V to 13.2V and provides for output
voltages of 0.6V to 12.7V. The output is adjustable based on a
resistor divider setting. Dropout voltages as low as 75mV (at
0.5A) typical can be realized using the device. This allows the
user to improve the system efficiency by lowering V_IN to nearly
V_OUT.
The ENABLE feature allows the part to be placed into a low
shutdown current mode of 165µA (typ). When enabled the device
operates with a low ground current of 11mA (typ), which provides
for operation with Low Quiescent Power consumption.
The device has superior transient response and is designed
keeping Single Event Effects in mind. This results in reduction of
the magnitude of SET seen on the output. There is no need for
additional protection diodes and filters.
COMP pin is provided to enable the use of external
compensation. This is achieved by connecting a resistor and
capacitor from COMP to ground. The device is stable with
Tantalum capacitors as low as 47µF (KEMET T525 series) and
provides excellent regulation all the way from no Load to full
Load. The programmable soft-start allows one to program the
inrush current by means of the decoupling capacitor used on the
BYP pin. The OCP pin allows the short circuit output current limit
threshold to be programmed by means of a resistor from OCP pin
to GND. The OCP setting range is from a 0.16A min to 3.2A max.
The resistor sets the constant current threshold for the output
under fault conditions. The thermal shutdown disables the output
if the device temperature exceeds the specified value, it will
subsequently enter a ON/OFF cycle till the fault is removed.
Applications
• LDO regulator for Space Power Systems
• DSP, FPGA and µP Core Power Supplies
• Post Regulation of SMPS and Down Hole Drilling
Features
• DLA SMD 5962-13220
• Input supply range 4.0V to 13.2V.
• Output Current up to 1.5A at a T_J = +150°C
• Best in class Accuracy ±1.5%
- Over line, load and temperature
• Ultra Low Dropout:
- 75mV Dropout (typ) @ 0.5A
- 225mV Dropout (typ) @ 1.5A
• Noise of 100µV_RMS (typ) between 300Hz to 300kHz
• SET mitigation with no added filtering/diodes
• Shutdown Current of 165µA (typ)
• Externally adjustable Output Voltage
• PSRR 65dB (typ) @ 1kHz
• ENable and PGood Feature
• Programmable Soft-Start/In-rush Current Limiting
• Adjustable Overcurrent Protection
• Over-Temperature Shutdown
• Stable with 47µF Min Tantalum Capacitor
• Package 16 Ld Flat Pack
• Radiation Environment
- High Dose Rate (50-300rad(Si)/s) . . . . . . . . . 100krad(Si)
- Low Dose Rate (0.01rad(Si)/s). . . . . . . . . . . . 100krad(Si)*
- SET/SEL/SEB . . . . . . . . . . . . . . . . . . . . . . . . ..86 MeV.cm2/mg
*Product capability established by initial characterization. The
"EH" version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
Related Literature
See AN1850, "ISL75052SEH Evaluation Board User's Guide"
See AN1851, "SEE Testing of the ISL75052SEH"
See AN1852, "Radiation Report of the ISL75052SEH"
EN
VIN
200µF 0.1µF
0.1µF 0.1µF 300Ω
3,4,5 VIN
VOUT 1,2
16 BYP
ADJ 15
ISL75052SEH
8 OCP
EN 14
9 VCCX
GND 13
10 PG
COMP 12
22k
VIN
1nF
22k
VOUT
2.5V
15.8k
2.2k
0.1µF 200µF
2.2n
4.87k
PG
FIGURE 1. TYPICAL APPLICATION
0.30
0.25
0.20
0.15
0.10
0.05
0.00 ₀
+150°C
+125°C
25°C
0.5
1.0
1.5
2.0
I_LOAD (A)
FIGURE 2. DROPOUT vs I_OUT
May 29, 2013
1
FN8456.0
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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