TLE9871QXA20_15 Datasheet, PDF (98/122 Pages) Infineon Technologies AG – Microcontroller with PWM Interface and BLDC MOSFET Driver for Automotive Applications

TLE9871QXA20
Electrical Characteristics
Table 30 DC Characteristics Port0, Port1 (cont’d)
V_S = 5.5 V to 28 V, T_j = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Min.
Values
Typ. Max.
Unit Note /
Number
Test Condition
Input low voltage
V_IL
-0.3
–
0.3 x V_DDP V ²⁾4.5V ≤ V_DDP ≤ P_5.1.3
5.5V
Input low voltage
Input high voltage
V_{IL_extend} -0.3
V_IH
0.7 x V_DDP
0.42 x –
V
V_DDP
–
V_DDP + 0.3 V
1)_{2.6V ≤ VDDP ≤}
4.5V
2)_{4.5V ≤ VDDP ≤}
5.5V
P_5.1.17
P_5.1.4
Input high voltage
Output low voltage
Output low voltage
Output high voltage
Output high voltage
Input leakage current
V_{IH_extend} –
V_OL
–
V_OL
–
V_OH
V_DDP - 1.0
V_OH
V_DDP - 0.4
I_OZ2
-5
0.52 x V_DDP + 0.3 V
V_DDP
–
1.0
V
–
0.4
V
–
–
V
–
–
V
–
+5
µA
1)_{2.6V ≤ VDDP ≤}
4.5V
3) 4) _{IOL ≤ IOLmax}
3) 5) _{IOL ≤ IOLnom}
3) 4) _{IOH ≥ IOHmax}
3) 5) _{IOH ≥ IOHnom}
6) _{TJ ≤ 85°C,}
0.45 V < V_IN
< V_DDP
P_5.1.18
P_5.1.6
P_5.1.7
P_5.1.8
P_5.1.9
P_5.1.10
Input leakage current
I_OZ2
-15
Pull level keep current
I_PLK
Pull level force current
I_PLF
Pin capacitance
C_IO
-200
-1.5
–
–
+15
µA T_J ≤ 150°C,
0.45 V < V_IN
< V_DDP
P_5.1.11
–
+200
µA ⁷⁾ V_PIN ≥ V_IH (up) P_5.1.12
V_PIN ≤ V_IL (dn)
–
+1.5
mA ⁷⁾ V_PIN ≤ V_IL (up) P_5.1.13
V_PIN ≥ V_IH (dn)
–
10
pF ¹⁾
P_5.1.14
Reset Pin Timing
Reset Pin Input Filter Time T_{filt_RESET} –
5
–
1) Not subject to production test, specified by design.
µs ¹⁾
P_5.1.19
2) Tested at V_DDP = 5V, specified for 4.5V < V_DDP < 5.5V.
3) The maximum deliverable output current of a port driver depends on the selected output driver mode. The limit for pin
groups must be respected.
4) Tested at 4.9V < V_DDP < 5.1V, I_OL = 4mA, I_OH = -4mA, specified for 4.5V < V_DDP < 5.5V.
5) As a rule, with decreasing output current the output levels approach the respective supply level (V_OL→GND, V_OH→V_DDP).
Tested at 4.9V < V_DDP < 5.1V, I_OL = 1mA, I_OH = -1mA.
6) The given values are worst-case values. In production tests, this leakage current is only tested at 150°C; other values are
ensured by correlation. For derating, please refer to the following descriptions:
Leakage derating depending on temperature (T_J = junction temperature [°C]):
I_OZ = 0.05 × e^{(1.5 + 0.028×TJ)} [µA]. For example, at a temperature of 95°C the resulting leakage current is 3.2 µA.
Leakage derating depending on voltage level (DV = V_DDP - V_PIN [V]):
I_OZ = I_OZtempmax - (1.6 × DV) [µA]
This voltage derating formula is an approximation which applies for maximum temperature.
Data Sheet
98
Rev. 1.0, 2015-04-30