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TLE9871QXA20_15 Datasheet, PDF (86/122 Pages) Infineon Technologies AG – Microcontroller with PWM Interface and BLDC MOSFET Driver for Automotive Applications
29.1.4 Thermal Resistance
TLE9871QXA20
Electrical Characteristics
Table 20 Thermal Resistance
Parameter
Symbol
Values
Unit Note /
Number
Min. Typ. Max.
Test Condition
Junction to Soldering Point
RthJSP
–
6
–
K/W 1) measured to
P_1.4.1
Exposed Pad
Junction to Ambient
RthJA
–
33
–
1) Not subject to production test, specified by design.
K/W 2)
P_1.4.2
2) According to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board. Board: 76.2x114.3x1.5mm³ with 2 inner
copper layers (35µm thick), with thermal via array under the exposed pad contacting the first inner copper layer and
300mm2 cooling area on the bottom layer (70µm).
29.1.5 Timing Characteristics
The transition times between the system modes are specified here. Generally the timings are defined from the
time when the corresponding bits in register PMCON0 are set until the sequence is terminated.
Table 21 System Timing1)
VS = 5.5 V to 28 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit Note / Test Condition
Number
Min. Typ. Max.
Wake-up over battery
tstart
––
3
ms Battery ramp-up time to code P_1.5.6
execution
Wake-up over battery
tstartSW –
–
1.5 ms Battery ramp-up time to till P_1.5.1
MCU reset is released; VS > 3
V and RESET = 1
Sleep-Exit
tsleep - exit –
–
1.5 ms Rising/falling edge of any
wake-up signal (PWM
P_1.5.2
interface, MON) till MCU reset
is released;
Sleep-Entry
tsleep -
–
–
330 µs 2)
P_1.5.3
entry
1) Not subject to production test, specified by design.
2) Wake events during Sleep-Entry are stored and lead to wake-up after Sleep Mode is reached.
Data Sheet
86
Rev. 1.0, 2015-04-30