TLE9871QXA20_15 Datasheet, PDF (113/122 Pages) Infineon Technologies AG – Microcontroller with PWM Interface and BLDC MOSFET Driver for Automotive Applications

29.12 MOSFET Driver
TLE9871QXA20
Electrical Characteristics
29.12.1 Electrical Characteristics
Table 40 Electrical Characteristics MOSFET Driver
V_S = 5.5 V to 28 V, T_j = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit Note / Test Condition Number
Min. Typ. Max.
MOSFET Driver Output
Source current - Charge
current (low gate voltage)
I_Soumax
200 250 420 mA V_SD > 8 V, C_Load = 10 nF, P_12.1.44
I_SOU = C_Load * slew rate, ( =
(20%-50%) / t_SLEW),
I_CHARGE = I_DISCHG =
31(max)
Sink current - Discharge
current
I_Sinkmax
High level output voltage
Gxx vs. Sxx
High level output voltage
GHx vs. SHx
High level output voltage
GHx vs. SHx
High level output voltage
GLx vs. GND
High level output voltage
GLx vs. GND
Rise time
V_Gxx1
V_Gxx2
V_Gxx3
V_Gxx6
V_Gxx7
t_{rise3_3nf}
Fall time
t_{fall3_3nf}
200 250 420 mA V_SD > 8 V, C_Load = 10 nF, P_12.1.45
I_SOU = C_Load * slew rate, ( =
(50%-20%) / t_SLEW),
I_CHARGE = I_DISCHG =
31(max)
10
–
14
V
V_SD > 8V¹⁾, C_Load = 10 nF P_12.1.3
8
––
V
V_SD = 6.4 V¹⁾²⁾, C_Load = 10 P_12.1.4
nF
7
––
V
V_SD = 5.4 V¹⁾, C_Load = 10 P_12.1.5
nF
8
––
V
V_SD = 6.4 V¹⁾²⁾, C_Load = 10 P_12.1.6
nF
7
––
V
V_SD = 5.4 V¹⁾, C_Load = 10 P_12.1.7
nF
–
200 –
ns ²⁾C_Load = 3.3 nF,
P_12.1.8
V_SD > 8 V,
25-75%, I_CHARGE = I_DISCHG
= 31(max)
–
200 –
ns ²⁾C_Load = 3.3 nF,
P_12.1.9
V_SD > 8 V,
75-25%, I_CHARGE = I_DISCHG
= 31(max)
Rise time
t_risemax
100 250 450 ns
C_Load = 10 nF,
V_SD > 8 V,
25-75%, I_CHARGE = I_DISCHG
= 31(max)
P_12.1.57
Data Sheet
113
Rev. 1.0, 2015-04-30