SPP20N60CFD Datasheet, PDF (9/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPP20N60CFD
17 Typ. reverse recovery charge
Q_rr = f(T_J)
parameter: I_D = 20.7A
1800
µC
1600
1500
1400
1300
1200
1100
1000
25
50
75
°C
125
T_j
18 Typ. reverse recovery charge
Q_rr = f(I_D)
parameter: di/dt = 100 A/µs
1800
µC
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
2
Tj = 125°C
Tj = 25°C
4 6 8 10 12 14 16 A 20
I_D
19 Typ. reverse recovery charge
Q_rr = f(di/dt)
parameter: ID = 20.7 A
3400
µC
3000
Tj = 125°C
2800
2600
2400
2200
Tj = 25°C
2000
1800
1600
1400
1200
1000
100
200
300
400
500
600
700 A/µs 900
di/dt
Page 9
2003-12-22