SPP20N60CFD Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPP20N60CFD
Maximum Ratings
Parameter
Drain Source voltage slope
V_DS = 480 V, I_D = 20.7 A, T_j = 125 °C
Maximum diode commutation speed
V_DS = 480 V, I_D = 20.7 A, T_j = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
dv/dt
di _F/dt
Value
80
900
Unit
V/ns
A/µs
Symbol
R_thJC
R_thJA
T _sold
Values
Unit
min. typ. max.
-
-
0.6 K/W
-
-
62
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V_(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V _(BR)DS V_GS=0V, I_D=20A
- 700
breakdown voltage
-V
-
Gate threshold voltage
Zero gate voltage drain current
V _GS(th) ID=1000µΑ, VGS=VDS 3
I_DSS
V_DS=600V, V_GS=0V,
T_j=25°C,
-
T_j=150°C
-
4
2.1
1700
5
µA
-
-
Gate-source leakage current
I_GSS
V_GS=20V, V_DS=0V
-
Drain-source on-state resistance R_DS(on) VGS=10V, ID=13.1A,
T_j=25°C
-
T_j=150°C
-
- 100 nA
Ω
0.19 0.22
0.51 -
Gate input resistance
R_G
f=1MHz, open Drain
-
0.54 -
Page 2
2003-12-22