SPP20N60CFD Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPP20N60CFD
Electrical Characteristics , at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Transconductance
g _fs
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,²⁾
energy related
C_iss
C_oss
C_rss
C_o(er)
Effective output capacitance,³⁾ C_o(tr)
time related
V_DS≥2*I _D*R_DS(on)max,
I_D=13.1A
V_GS=0V, V_DS=25V,
f=1MHz
V _GS=0V,
V_DS=0V to 480V
- 17.5 - S
- 2400 - pF
-
780
-
-
50
-
-
83
- pF
- 160
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
V_DD=380V, V_GS=0/10V,
-
12
- ns
t_r
I_D=20.7A, R_G=3.6Ω
-
15
-
t_d(off)
-
59
-
t_f
-
6.4
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q_gs
V_DD=480V, I_D=20.7A
-
15
- nC
Q_gd
-
54
-
Q_g
V_DD=480V, I_D=20.7A,
-
95 124
V_GS=0 to 10V
Gate plateau voltage
V_(plateau) V_DD=480V, I _D=20.7A
-
7
-V
1Repetitve _{avalanche causes additional power losses that can be calculated as PAV=EAR*f.}
2_{Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.}
3_{Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.}
Page 3
2003-12-22