SPP20N60CFD Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

9 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 20.7 A pulsed
SPP20N60CFD
16
V
0.2 VDS max
12
0.8 V_{DS max}
10
8
6
4
2
0
0
20 40
60 80 100 120 ^nC 150
Q_Gate
11 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
20
SPP20N60CFD
10 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP20N60CFD}
A
10 ¹
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
12 Avalanche energy
E_AS = f (T_j)
par.: I_D = 10 A, V_DD = 50 V
750
mJ
A
Tj(Start)=25°C
10
5
Tj(Start)=125°C
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs 10 ⁴
t_AR
Page 7
600
550
500
450
400
350
300
250
200
150
100
50
0
20
40
60
80 100 120 °C
160
T_j
2003-12-22