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SPP20N60CFD Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor
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SPP20N60CFD
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPP20N60CFD
720
V
680
660
640
620
600
580
560
540
-60 -20
20
60
100 °C
180
Tj
15 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 5
pF
10 4
Ciss
10 3
14 Avalanche power losses
PAR = f (f )
parameter: EAR=1mJ
500
W
300
200
100
0
10
4
10 5
16 Typ. Coss stored energy
Eoss=f(V DS)
Hz
10 6
f
14
µJ
10
8
6
10 2
Coss
10 1
0
Crss
100 200 300 400
V
600
VDS
Page 8
4
2
0
0
100 200 300 400
V
600
VDS
2003-12-22
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