SPP20N60CFD Datasheet, PDF (6/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPP20N60CFD
5 Typ. output characteristic
I_D = f (V_DS); T_j=150°C
parameter: t_p = 10 µs, V_GS
40
Vgs = 20V
A
Vgs = 7.5V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
30 Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
25
6 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
1.5
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Ω
Vgs = 6.5V
Vgs = 7V
Vgs = 7.5V
Vgs = 20V
20
0.9
15
10
0.6
5
0
0
4
8 12 16 20 V 28
V_DS
0.3
0
5
10 15 20 25 30 A 40
I_D
7 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 13.1 A, V_GS = 10 V
SPP20N60CFD
1.3
Ω
1.1
1
0.9
0.8
0.7
0.6
0.5
8 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
70
A
Tj = 25°C
50
Tj = 150°C
40
30
0.4
20
0.3
98%
0.2
typ
10
0.1
0
-60 -20 20
60 100 ^°C
180
T_j
0
0
4
8
12
V
20
V_GS
Page 6
2003-12-22