SPP20N60CFD Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Intrinsic fast-recovery body diode
• Extreme low reverse recovery charge
SPP20N60CFD
V_DS @ T_jmax 650
V
R_DS(on)
0.22 Ω
I_D
20.7 A
P-TO220-3-1
Type
Package
Ordering Code
SPP20N60CFD P-TO220-3-1 Q67040-S4616
Marking
20N60CFD
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T _C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D = 10 A, V_DD = 50 V
Avalanche
energy,
repetitive
t_AR
limited
by
T
1)
jmax
I_D = 20 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
I_AR
dv/dt
I_S=20.7A, V_DS=480V, T_j=125°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
V_GS
V_GS
P_tot
T_j , T_stg
Page 1
Value
Unit
A
20.7
13.1
52
690
mJ
1
20
A
40
V/ns
±20
V
±30
208
W
-55... +150
°C
2003-12-22