SPP11N60C3_09 Datasheet, PDF (9/16 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
17 Typ. drain source voltage slope
dv/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=11A
140
V/ns
120
110
100
90
80
70
60
50
40
30
20
10
0
dv/dt(off)
dv/dt(on)
10 20 30 40 50 _Ω 70
R_G
19 Typ. switching losses
E = f(R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=11A
0.24 _{*) Eon includes SPD06S60 diode}
commutation losses
mWs
0.16
Eoff
0.12
0.08
Eon*
0.04
0
0
10 20 30 40 50 _Ω
70
R_G
Rev . 3 .2
18 Typ. switching losses
E = f (I_D), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, R_G=6.8Ω
0.04
*) Eon includes SPD06S60 diode
mWs
commutation losses
0.03
0.025
0.02
0.015
0.01
Eon*
0.005
Eoff
0
0
2
4
6
20 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
11
A
8
A
12
I_D
9
8
7
6
5
T j(START)=25°C
4
3
T j(START)=125°C
2
1
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
Page 9
2009-11-27