SPP11N60C3_09 Datasheet, PDF (7/16 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
9 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
2
Ω
4V 4.5V 5V
5.5V
6V
1.6
1.4
1.2
1
0.8
6.5V
0.6
8V
20V
0.4
0 2 4 6 8 10 12 14 16 _A 20
I_D
11 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
40
A
25°C
32
28
24
150°C
20
16
12
8
4
0
0
2
4
6
8 10 12 _V 15
V_GS
Rev. 3.2
10 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 7 A, V_GS = 10 V
2.1 ^SPP11N60C3
Ω
1.8
1.6
1.4
1.2
1
0.8
0.6
98%
0.4
typ
0.2
0
-60 -20
20
60 100 °C
180
T_j
12 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 11 A pulsed
SPP11N60C3
16
V
12
0,2 V_{DS max}
10
0,8 V_{DS max}
8
6
4
2
0
0
Page 7
10 20 30 40 50 _nC 70
Q_Gate
2009-11-27