SPP11N60C3_09 Datasheet, PDF (8/16 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
13 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP11N60C3}
A
10 ¹
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
15 Typ. switching time
t = f (R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=11 A
350
ns
14 Typ. switching time
t = f (I_D), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, R_G=6.8Ω
70
ns
60
55
td(off)
50
45
40
35
30
25
20
tf
15
td(on)
10
5
tr
0
0
2
4
6
8
A
12
I_D
16 Typ. drain current slope
di/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=11A
3000
A/µs
250
2000
200
td(off)
1500
td(on)
150
tr
tf
1000
100
di/dt(off)
50
500
di/dt(on)
0
0
10 20 30 40 50 _Ω
70
R_G
Rev. 3 .2
0
0
Page 8
20
40
60
80
Ω
120
R_G
2009-11-27