SPP11N60C3_09 Datasheet, PDF (4/16 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics
Parameter
Symbol Conditions
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
I_S
T_C=25°C
I_SM
V_SD
t_rr
Q_rr
I_rrm
di_rr/dt
V_GS=0V, I_F=I_S
V_R=480V, I_F=I_S ,
di_F/dt=100A/µs
T_j=25°C
Values
Unit
min. typ. max.
-
-
11 A
-
-
33
-
1 1.2 V
- 400 600 ns
-
6
- µC
-
41
-A
- 1200 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
SPP_I
SPA
R_th1
R_th2
R_th3
R_th4
R_th5
R_th6
0.015
0.03
0.056
0.197
0.216
0.083
0.15
0.03
0.056
0.194
0.413
2.522
K/W
C_th1
C_th2
C_th3
C_th4
C_th5
C_th6
Value
SPP_I
SPA
0.0001878 0.0001878
0.0007106 0.0007106
0.000988 0.000988
0.002791 0.002791
0.007285 0.007401
0.063
0.412
Unit
Ws/K
P_tot (t)
T_j R_th1
C _th1
C _{th 2}
R_{th,n Tcase} ^{External Heatsink}
C _th,n
T_amb
Rev . 3.2
Page 4
2009-11-27