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SPP11N60C3_09 Datasheet, PDF (6/16 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
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2SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 0
10 -1
10 -2
10 -3
10 -1
D = 0.5
D = 0.2
10 -2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
10 -3
single pulse
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
7 Typ. output characteristic
8 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
40
A
20V
10V
8V
32
28
22
A
7V
18
16
20V
8V
7V
7.5V
6V
6,5V
14
24
12
20
6V
10
16
8
12
5,5V
6
8
5V
4
4
4,5V
2
5.5V
5V
4.5V
4V
0
0
0 3 6 9 12 15 18 21 V 27
0
VDS
Rev. 3 .2
Page 6
5
10
15
V
25
VDS
2007-08-30
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