SPP11N60C3_09 Datasheet, PDF (1/16 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS @ T_jmax
R_DS(on)
I_D
• Periodic avalanche rated
PG-TO220FP PG-TO262
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
23
1
P-TO220-3-31
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V
0.38 Ω
11 A
PG-TO220
Type
Package
Ordering Code Marking
SPP11N60C3
PG-TO220 Q67040-S4395 11N60C3
SPI11N60C3
PG-TO262 Q67042-S4403 11N60C3
SPA11N60C3 PG-TO220_{FP Q67040-S4408}
SPA11N60C3E8185 ^PG-TO220
11N60C3
11N60C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=11A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Reverse diode dv/dt ⁷⁾
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
dv/dt
11
11¹⁾
7
7¹⁾
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3 . 2
Page 1
2009-11-27