SPP11N60C3_09 Datasheet, PDF (10/16 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
21 Avalanche energy
E_AS = f (T_j)
par.: I_D = 5.5 A, V_DD = 50 V
350
mJ
22 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP11N60C3
720
V
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
T_j
23 Avalanche power losses
P_AR = f (f )
parameter: E_AR=0.6mJ
300
W
200
680
660
640
620
600
580
560
540
-60 -20
20
60 100
24 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁴
pF
C_iss
10 ³
°C
180
T_j
150
10 ²
C_oss
100
10 ¹
C_rss
50
0
10
4
Rev. 3 .2
10 ⁵
Hz
10 ⁶
f
10 ⁰
0
100 200 300 400
V
600
V_DS
Page 10
2009-11-27