PTFC262157FH Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz

PTFC262157FH
Package Outline Specifications
Package H-34288G-4/2
D 45° x .64
[.025]
2X
30.0°
4X 3.49±0.51
[.138±.020]
V
9.78
CL
[.385]
21.72
[.855]
CL
D
1.98
[.078]
2X 2.29
[.090]
V
CL
9.40
[.370]
16.76±0.51
[.660±.020]
4X R0.51+-..1338
[^{R.020+-..000155} ]
4.04+-00.1.235
[^{.159+-.0.00150} ]
SPH 1.57
[.062]
G
CL
2X 17.75
[.699]
22.35±0.20
[.880±.008]
H-34288G-4/2_sl_po_03_08-08-2013
1.02
[.040]

S
23.11
[.910]
Diagram Notes—unless otherwise specified:
Diag₁r_.am_InN_teo_rt_pe_rs_e—_{t d}u_imnle_es_ns_sio_ot_nh_se_arw_ni_dse_tos_lep_re_ac_nif_cie_ed_s:_{per ASME Y14.5M-1994.}
2.^1. Pr^Inim^tea^rr^py^red^tim^die^mn^esⁿio^sn^iosⁿa^sre^anm^dm^to.^lA^erlt^aeⁿrn^cea^ste^pd^ei^rm^Ae^Sn^Msio^En^Ys¹a⁴r^.e^5Min^-c¹h⁹e⁹s⁴. ^.
3.^2. Al^Pl ^rto^imle^ara^rync^de^ims ^e±ⁿ0^s.^io1ⁿ2^s7 ^a[.^r0^e0^m5]^mu^.n^Ale^ls^tes^rns^ap^te^eci^dfiⁱe^md^eoⁿt^sh^ioeⁿrw^sis^ae^re. ^inches.
4.^3.
5.^4.
LPei^APnalislnd:^tsoDt:h^leDi–c^rk^a–dnnrde^cars^{eianssi;:n±G0,} .^S01–^.0^1–g2+a^s7to0e^u[.;^.0^r0Sc5^0e1–^5,/^]-^Gs.0o.^{–u0r2gc5aet;meV,}m^{V–[V.–}0^D0^dD5^r.a+ⁱⁿ0^v.0^o0^lt2^a/^g-0^e.0^(V0^D1^Din^).ch].
6.^5. G^Lo^eld^adpla^thtiⁱn^ckgⁿt^eh^sic^sk^:n⁰e^.1ss⁰:⁺0⁰.2^.05⁵m^1/i^–c⁰ro^.0n²[⁵10^[.0m⁰i⁴cr⁺oi^.n⁰c⁰h²]^/–m^.0a⁰x¹. ^].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
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Data Sheet
9 of 10
Rev. 03.1, 2016-06-21